UMW FDD5810(UMW)

UMW · FETs & Power MOSFETs · MPN FDD5810(UMW)

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)37A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation72W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.42nF

Technical details

N-Channel 60V 37A 72W Surface Mount TO-252

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