UMW FDD1600N10ALZ(UMW)

UMW · FETs & Power MOSFETs · MPN FDD1600N10ALZ(UMW)

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Specifications

Gate Charge(Qg)2.78nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)43pF
Current - Continuous Drain(Id)6.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation14.9W
Reverse Transfer Capacitance (Crss@Vds)2.04pF
RDS(on)124mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)169pF
TypeN-Channel

Technical details

N-Channel 100V 6.8A 14.9W Surface Mount TO-252

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