UMW BSP170P(UMW)

UMW · FETs & Power MOSFETs · MPN BSP170P(UMW)

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)10nC@10V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)1.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.8W
RDS(on)239mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)38pF
Number1 P-Channel
Input Capacitance(Ciss)328pF
TypeP-Channel

Technical details

P-Channel 60V 1.9A 1.8W Surface Mount SOT-223

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