UMW AO6604

UMW · FETs & Power MOSFETs · MPN AO6604

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Specifications

Gate Charge(Qg)2.9nC@4.5V;8.5nC@4.5V
Drain to Source Voltage20V;20V
Output Capacitance(Coss)48pF;80pF
Current - Continuous Drain(Id)3.4A;2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV;650mV
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)27pF;70pF
RDS(on)51mΩ@4.5V;56mΩ@-4.5V
Input Capacitance(Ciss)260pF;560pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 20V 3.4A 2.5A 1.1W 1.1W Surface Mount SOT-23-6

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