UMW · FETs & Power MOSFETs · MPN AO6604
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| Gate Charge(Qg) | 2.9nC@4.5V;8.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V;20V |
| Output Capacitance(Coss) | 48pF;80pF |
| Current - Continuous Drain(Id) | 3.4A;2.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV;650mV |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF;70pF |
| RDS(on) | 51mΩ@4.5V;56mΩ@-4.5V |
| Input Capacitance(Ciss) | 260pF;560pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 20V 3.4A 2.5A 1.1W 1.1W Surface Mount SOT-23-6