UMW · FETs & Power MOSFETs · MPN AO6601
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| Gate Charge(Qg) | 10nC@10V;5.9nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 35pF;37pF |
| Current - Continuous Drain(Id) | 3.4A;2.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.15W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF;20pF |
| RDS(on) | 46mΩ@10V;88mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 235pF;260pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel 30V 3.4A 1.15W Surface Mount SOT-23-6