UMW AO3409A

UMW · FETs & Power MOSFETs · MPN AO3409A

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Specifications

Gate Charge(Qg)6.8nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)50.3pF
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)37.8pF
RDS(on)77mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)302pF

Technical details

P-Channel 30V 2.6A 1.4W Surface Mount SOT-23

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