UMW 5N65F

UMW · FETs & Power MOSFETs · MPN 5N65F

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)730pF
TypeN-Channel

Technical details

N-Channel 650V 5A 50W Through Hole TO-220F

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