UMW · FETs & Power MOSFETs · MPN 4N60L
No reviews yet — be the first to review UMW 4N60L.
| Gate Charge(Qg) | 14.8nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 36W |
| RDS(on) | 2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 580pF |
600V 4A 36W Surface Mount TO-252