UMW 2N60G

UMW · FETs & Power MOSFETs · MPN 2N60G

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Specifications

Gate Charge(Qg)7.2nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
RDS(on)4.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)320pF
TypeN-Channel

Technical details

N-Channel 600V 2A Surface Mount SOT-223

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