UMW · FETs & Power MOSFETs · MPN 1N65G
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| Gate Charge(Qg) | 4.8nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 5.4pF |
| RDS(on) | 11Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 150pF |
| Type | N-Channel |
N-Channel 650V 1A Surface Mount SOT-223