UMW 1N60L

UMW · FETs & Power MOSFETs · MPN 1N60L

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Specifications

Gate Charge(Qg)4.8nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation27W
RDS(on)11Ω@10V
Reverse Transfer Capacitance (Crss@Vds)5.4pF
Number1 N-channel
Input Capacitance(Ciss)150pF
TypeN-Channel

Technical details

N-Channel 600V 1A 27W Surface Mount TO-252

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