TWGMC · FETs & Power MOSFETs · MPN TWS6602FJ
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| Gate Charge(Qg) | 58nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 5.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.46nF |
| Type | N-Channel |
60V 110A 2.5V 83W 5.4mΩ@4.5V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS