TWGMC TW80N06D

TWGMC · FETs & Power MOSFETs · MPN TW80N06D

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)90nC@10V
Output Capacitance(Coss)286pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation108W
Reverse Transfer Capacitance (Crss@Vds)257pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.136nF
TypeN-Channel

Technical details

N-Channel 60V 80A 108W Surface Mount TO-252-2L

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