TWGMC TW80N03EF

TWGMC · FETs & Power MOSFETs · MPN TW80N03EF

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Specifications

Gate Charge(Qg)60.5nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)251pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation82.5W
RDS(on)5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)230pF
Number1 N-channel
Input Capacitance(Ciss)2.016nF
TypeN-Channel

Technical details

N-Channel 30V 80A 82.5W Surface Mount DFN-8L(5x6)

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