TWGMC TW80N03D

TWGMC · FETs & Power MOSFETs · MPN TW80N03D

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Specifications

Gate Charge(Qg)11.1nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.16nF
TypeN-Channel

Technical details

N-Channel 30V 80A 54W Surface Mount TO-252-2L

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