TWGMC TW50P03D

TWGMC · FETs & Power MOSFETs · MPN TW50P03D

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Specifications

Gate Charge(Qg)22nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)508pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)421pF
RDS(on)14.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.448nF
TypeP-Channel

Technical details

P-Channel 30V 50A 45W Surface Mount TO-252

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