TWGMC TW50NG10

TWGMC · FETs & Power MOSFETs · MPN TW50NG10

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)506pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation110W
RDS(on)16mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)44pF
Number1 N-channel
Input Capacitance(Ciss)1.336nF
TypeN-Channel

Technical details

N-Channel 100V 50A 110W Surface Mount TO-252-2L

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