TWGMC · FETs & Power MOSFETs · MPN TW50N10D
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 26nC@10V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 506pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 110W |
| RDS(on) | 16mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.336nF |
| Type | N-Channel |
N-Channel 100V 50A 110W Surface Mount TO-252