TWGMC TW50N06D

TWGMC · FETs & Power MOSFETs · MPN TW50N06D

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation87.7W
RDS(on)12mΩ@10V;16mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)120pF
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

N-Channel 60V 50A 87.7W Surface Mount TO-252-2L

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