TWGMC TW30P10

TWGMC · FETs & Power MOSFETs · MPN TW30P10

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Specifications

Gate Charge(Qg)48nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)155pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)139pF
RDS(on)24mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.15nF
TypeP-Channel

Technical details

P-Channel 30V 10A 5W Surface Mount DFN2X2-6L

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