TWGMC TW110P03EF

TWGMC · FETs & Power MOSFETs · MPN TW110P03EF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)130nC@0V
Output Capacitance(Coss)820pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)540pF
RDS(on)3.1mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7nF
TypeP-Channel

Technical details

P-Channel 30V 110A 60W Surface Mount PDFN-8(5x6)

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