TWGMC TW100P03D

TWGMC · FETs & Power MOSFETs · MPN TW100P03D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)108nC@10V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)695pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)550pF
RDS(on)5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.3nF
TypeP-Channel

Technical details

P-Channel 30V 100A 60W Surface Mount TO-252

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