TWGMC TW100N03D

TWGMC · FETs & Power MOSFETs · MPN TW100N03D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)11.1nC@4.5V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)310pF
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation80W
RDS(on)3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)280pF
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

N-Channel 30V 100A Surface Mount TO-252

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