TWGMC · FETs & Power MOSFETs · MPN SI2308-TWGMC
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| Gate Charge(Qg) | 9.3nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 45pF |
| Operating Temperature - | -50℃~+125℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 1.56W |
| RDS(on) | 60mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 500pF |
| Type | N-Channel |
60V 4A 1.4V 1.56W 60mΩ@10V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS