TWGMC SI2306

TWGMC · FETs & Power MOSFETs · MPN SI2306

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Specifications

Gate Charge(Qg)3nC@5V
Drain to Source Voltage30V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)3.16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation750mW
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)47mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)305pF
TypeN-Channel

Technical details

N-Channel 30V 3.16A 0.75W Surface Mount SOT-23

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