TWGMC SI2305

TWGMC · FETs & Power MOSFETs · MPN SI2305

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Specifications

Gate Charge(Qg)4.5nC
Drain to Source Voltage12V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)60mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)740pF
TypeP-Channel

Technical details

P-Channel 12V 4.1A 0.35W Surface Mount SOT-23

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