TWGMC · FETs & Power MOSFETs · MPN SI2305
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| Gate Charge(Qg) | 4.5nC |
|---|---|
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 4.1A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| RDS(on) | 60mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 740pF |
| Type | P-Channel |
P-Channel 12V 4.1A 0.35W Surface Mount SOT-23