TWGMC · FETs & Power MOSFETs · MPN FDN308P-TWGMC
No reviews yet — be the first to review TWGMC FDN308P-TWGMC.
| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 4.8nC@4.5V |
| Current - Continuous Drain(Id) | 2.9A |
| Output Capacitance(Coss) | 65pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 65mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 550pF |
| Type | P-Channel |
20V 2.9A 1V 1.4W 65mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS