Truesemi TSSA30DN06

Truesemi · FETs & Power MOSFETs · MPN TSSA30DN06

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)120pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
RDS(on)14mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)100pF
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

60V 30A 3V 50W 14mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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