Truesemi TSP630M

Truesemi · FETs & Power MOSFETs · MPN TSP630M

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Specifications

Gate Charge(Qg)20nC@10V
Configuration-
Drain to Source Voltage200V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)9.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation72W
RDS(on)400mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-channel
Input Capacitance(Ciss)400pF

Technical details

N-Channel 200V 9.5A 72W Through Hole TO-220

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