Truesemi TSP32N20M

Truesemi · FETs & Power MOSFETs · MPN TSP32N20M

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)288pF
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)86mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.2nF
TypeN-Channel

Technical details

N-Channel 200V 32A 48W Through Hole TO-220

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