Truesemi TSK82N30MSD

Truesemi · FETs & Power MOSFETs · MPN TSK82N30MSD

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Specifications

Drain to Source Voltage300V
Gate Charge(Qg)153nC
Output Capacitance(Coss)716pF
Current - Continuous Drain(Id)82A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation500W
RDS(on)55mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)78pF
Number1 N-channel
Input Capacitance(Ciss)7.318nF
TypeN-Channel

Technical details

N-Channel 300V 82A 500W Through Hole TO-247

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