Truesemi TSK82N25MSD

Truesemi · FETs & Power MOSFETs · MPN TSK82N25MSD

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Specifications

Gate Charge(Qg)155nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)812pF
Current - Continuous Drain(Id)82A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)89pF
RDS(on)41.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.327nF
TypeN-Channel

Technical details

N-Channel 250V 82A 500W Through Hole TO-247

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