Truesemi TSK65R099

Truesemi · FETs & Power MOSFETs · MPN TSK65R099

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)70nC@10V
Output Capacitance(Coss)117pF
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.9V
Pd - Power Dissipation255W
RDS(on)103mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2.2pF
Number1 N-channel
Input Capacitance(Ciss)1.9nF
TypeN-Channel

Technical details

N-Channel 650V 31A 255W Through Hole TO-247

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