Truesemi TSK50N50MZ

Truesemi · FETs & Power MOSFETs · MPN TSK50N50MZ

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Specifications

Gate Charge(Qg)180nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)652pF
Current - Continuous Drain(Id)50A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation568W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)180mΩ
Number1 N-channel
Input Capacitance(Ciss)8.814nF
TypeN-Channel

Technical details

N-Channel 500V 50A Through Hole TO-247

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