Truesemi TSK50N30M

Truesemi · FETs & Power MOSFETs · MPN TSK50N30M

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Specifications

Gate Charge(Qg)122nC
Drain to Source Voltage300V
Output Capacitance(Coss)600pF
Current - Continuous Drain(Id)50A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation198W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.49nF
TypeN-Channel

Technical details

N-Channel 300V 50A 198W Through Hole TO-247

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