Truesemi · FETs & Power MOSFETs · MPN TSK40N60M
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 182nC@10V |
| Output Capacitance(Coss) | 575pF |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 560W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.885nF |
| Type | N-Channel |
600V 40A 4V 560W 150mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS