Truesemi TSK100N20M

Truesemi · FETs & Power MOSFETs · MPN TSK100N20M

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Specifications

Gate Charge(Qg)123nC
Drain to Source Voltage200V
Output Capacitance(Coss)783pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation550W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.904nF
TypeN-Channel

Technical details

N-Channel 200V 100A 550W Through Hole TO-247

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