Truesemi TSK044N10B

Truesemi · FETs & Power MOSFETs · MPN TSK044N10B

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Specifications

Gate Charge(Qg)74nC
Drain to Source Voltage100V
Output Capacitance(Coss)2.4nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation370W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.2nF
TypeN-Channel

Technical details

N-Channel 100V 180A 370W Through Hole TO-247

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