Truesemi TSF840MD

Truesemi · FETs & Power MOSFETs · MPN TSF840MD

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45.5W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.05nF
TypeN-Channel

Technical details

N-Channel 500V 8A 45.5W Through Hole TO-220F-3

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