Truesemi TSF65R550

Truesemi · FETs & Power MOSFETs · MPN TSF65R550

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Specifications

Gate Charge(Qg)15.6nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)470fF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)470pF
TypeN-Channel

Technical details

N-Channel 650V 8A 21W Through Hole TO-220F

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