Truesemi TSF25N50MD

Truesemi · FETs & Power MOSFETs · MPN TSF25N50MD

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)250mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.9nF
TypeN-Channel

Technical details

N-Channel 500V 25A 37W Through Hole TO-220F

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