Truesemi TSF12N65M

Truesemi · FETs & Power MOSFETs · MPN TSF12N65M

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.85nF
TypeN-Channel

Technical details

N-Channel 650V 12A 54W Through Hole TO-220F

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