Truesemi TSF10N80M

Truesemi · FETs & Power MOSFETs · MPN TSF10N80M

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Specifications

Gate Charge(Qg)45nC
Drain to Source Voltage800V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation240W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)3.5nF
TypeN-Channel

Technical details

N-Channel 800V 10A 240W Through Hole TO-220F

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