Truesemi TSD840MD

Truesemi · FETs & Power MOSFETs · MPN TSD840MD

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.4nF
TypeN-Channel

Technical details

N-Channel 500V 8A 100W Surface Mount TO-252

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