Truesemi TSD6N50M

Truesemi · FETs & Power MOSFETs · MPN TSD6N50M

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.45nF
TypeN-Channel

Technical details

N-Channel 500V 6A 90W Surface Mount TO-252

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