Truesemi TSD65R300

Truesemi · FETs & Power MOSFETs · MPN TSD65R300

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)24nC@10V
Output Capacitance(Coss)47pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation114W
RDS(on)300mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-channel
Input Capacitance(Ciss)755pF
TypeN-Channel

Technical details

N-Channel 650V 15A 114W Surface Mount TO-252

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