Truesemi TSD5N65M

Truesemi · FETs & Power MOSFETs · MPN TSD5N65M

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Specifications

Gate Charge(Qg)16nC@480V
Drain to Source Voltage650V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)560pF
TypeN-Channel

Technical details

N-Channel 650V 3A 58W Surface Mount DPAK(TO-252)

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