Truesemi TSD5N60M

Truesemi · FETs & Power MOSFETs · MPN TSD5N60M

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Specifications

Gate Charge(Qg)12nC
Drain to Source Voltage600V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)560pF
TypeN-Channel

Technical details

N-Channel 600V 4.5A 48W Surface Mount DPAK(TO-252)

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