Truesemi TSD18N20M

Truesemi · FETs & Power MOSFETs · MPN TSD18N20M

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)71pF
RDS(on)170mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.24nF
TypeN-Channel

Technical details

N-Channel 200V 18A 70W Surface Mount DPAK(TO-252)

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