Truesemi TSD16N25M

Truesemi · FETs & Power MOSFETs · MPN TSD16N25M

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)64pF
RDS(on)250mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.275nF
TypeN-Channel

Technical details

N-Channel 250V 16A 35W Surface Mount TO-252

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